FDP55N06

FAIRCHILD SEMICONDUCTOR  FDP55N06  晶体管, MOSFET, N沟道, 55 A, 60 V, 0.018 ohm, 10 V, 2 V

The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.

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100% Avalanche tested

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30nC Typical low gate charge

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60pF Typical low Crss