FDP5N50

N沟道MOSFET N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode powersuppliesand active power factor correction.

Features

•RDSon = 1.15Ω Typ.@ VGS= 10V, ID= 2.5A

• Low gate charge Typ. 11nC

• Low Crss Typ. 5pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant