BFQ790H6327XTSA1

晶体管 双极-射频, NPN, 6.1 V, 20 GHz, 1.5 W, 300 mA, 60 hFE

Description:

The BFQ790 is a single stage driver amplifier with very high linearity. Its output 1dB compression point is 27 dBm. The device is housed in the halogen-free industry standard package SOT89. The high thermal conductivity of silicon substrate and the low thermal resistance of the package add up to a thermal resistance of only 35 K/W, which leads to moderate junction temperatures even at high dissipated power values. The proper die attach with good thermal contact is 100% tested to ensure the thermal properties. The device is based on "s reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown, which leads to a high ruggedness against mismatch at the output. The special design of the emitter/base diode makes it robust and yields to a high maximum RF input power capability.

Summary of Features:

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High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and 2650 MHz Class A application circuits

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High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40% collector efficiency

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High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit

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Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA

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Single stage, intended for external matching

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Exceptional ruggedness up to VSWR 10:1 at output

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High maximum RF input power PRFinmax of 18 dBm

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Safe operation with single 5 V supply

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100% test of proper die attach for reproducible thermal contact

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100% DC and RF tested

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Easy to use large signal compact VBIC model available

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In-house NPN SiGe technology running in very high volume

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Easy to use Pb-free RoHS compliant and halogen-free industry standard package SOT89, low RTHJS of 35 K/W