PBSS5160T

NXP  PBSS5160T  单晶体管 双极, PNP, 60 V, 220 MHz, 270 mW, 1 A, 350 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -80V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −60V 集电极连续输出电流ICCollector CurrentIC| -900mA/-0.9A 截止频率fTTranstion FrequencyfT| 220MHz 直流电流增益hFEDC Current GainhFE| 350 管压降VCE（sat）Collector-Emitter SaturationVoltage| -330mV/-0.33V 耗散功率PcPoWer Dissipation| 270mW/0.27W Description & Applications| General description PNP low VCEsat Breakthrough In Small Signal BISS transistor in a SOT23 TO-236ABsmall Surface-Mounted Device SMD plastic package. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency due to less heat generation Reduces Printed-Circuit Board PCB area required Cost-effective replacement for medium power transistors BCP52 and BCX52 Applications Major application segments: Automotive、Telecom infrastructure、Industrial、Power management、DC-to-DC conversion、Supply line switching、Peripheral driver、Driver in low supply voltage applications e.g. lamps and LEDs、 Inductive load drivers e.g. relays, buzzers and motors 描述与应用| 一般说明 PNP低VCE（饱和）突破性小信号（BISS），采用SOT23（TO-236AB）小型表面贴装器件（SMD）塑料包装。 特点 低集电极 - 发射极饱和电压VCE监测 ？高集电极电流能力IC和ICM ？由于产生的热量少，高效率 ？降低印刷电路板（PCB）面积 中等功率晶体管的成本效益的替代？BCP52和BCX52 应用 主要应用领域： ？汽车，电信基础设施，？工业，电源管理，DC-DC转换，切换供电线路，外设驱动器，驱动器在低电源电压应用（如灯和LED），？感性负载驱动器（如继电器，蜂鸣器和电机）