FDS6912A

FAIRCHILD SEMICONDUCTOR  FDS6912A  双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V

The is a 30V Dual N-channel logic level PowerTrench® MOSFET produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. This product is general usage and suitable for many different applications.

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Fast switching speed

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Low gate charge

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High performance trench technology for extremely low RDS ON

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High power and current handling capability

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±20V Gate source voltage VGSS

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78°C/W Thermal resistance, junction to ambient

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40°C/W Thermal resistance, junction to case