FDS6912A
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS6912A 双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
The is a 30V Dual N-channel logic level PowerTrench® MOSFET produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. This product is general usage and suitable for many different applications.
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- Fast switching speed
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- Low gate charge
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- High performance trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±20V Gate source voltage VGSS
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- 78°C/W Thermal resistance, junction to ambient
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- 40°C/W Thermal resistance, junction to case