BSP89H6327XTSA1

INFINEON  BSP89H6327XTSA1  晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, 1.4 V 新

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 240V 350MA SOT223-4

欧时:
Infineon SIPMOS 系列 Si N沟道 MOSFET BSP89H6327XTSA1, 350 mA, Vds=240 V, 3针+焊片 SOT-223封装

立创商城:
N沟道 240V 350A

e络盟:
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, 1.4 V

艾睿:
This BSP89H6327XTSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 1800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 240V 0.35A 4-Pin SOT-223 T/R

Chip1Stop:
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin3+Tab SOT-223 T/R

TME:
Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223

Verical:
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin3+Tab SOT-223 T/R

Newark:
# INFINEON  BSP89H6327XTSA1  MOSFET, N-CH, 240V, 0.35A, SOT-223-4 New

Win Source:
MOSFET N-CH 4SOT223