BSP89,115

NXP  BSP89,115  晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V

The is a N-channel enhancement-mode logic level FET in a plastic package using vertical D-MOS technology. It is intended for use as a surface-mount device in line current interrupters in telephone sets and for application in relay, high speed and line transformer drivers.

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Direct interface to Complementary C-MOS transistor and Transistor-Transistor Logic TTL devices

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Very fast switching

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No secondary breakdown