BSP89
INFINEON BSP89 晶体管, MOSFET, N沟道, 360 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
最大源漏极电压Vds Drain-Source Voltage| 240V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 350mA/0.35A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 4.9Ω/Ohm 350mA,10V 开启电压Vgs(th) Gate-Source Threshold Voltage| 1.2V 耗散功率Pd Power Dissipation| 1.8W Description & Applications| Smart Lowside Power Switch N-Channel Enhancement mode Logic Level dv/dt rated •Pb-free lead plating; RoHS compliant • ee lead plating; RoHS compliant Qualified according to AEC Q101 描述与应用| 低端智能电源开关 N沟道 增强模式 逻辑电平 dv / dt的额定 •无铅引脚电镀,符合RoHS •EE镀铅,符合RoHS标准 符合AEC Q101