BSZ025N04LSATMA1

晶体管, MOSFET, N沟道, 40 A, 40 V, 0.002 ohm, 10 V, 2 V

Summary of Features:

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Optimized for synchronous rectification

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15% lower R DSon than alternative devices

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31% improvement of FOM over similar devices

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Integrated Schottky-like diode

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RoHS compliant - halogen free

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MSL1 rated

Benefits:

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Highest system efficiency

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Less paralleling required

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Increased power density

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System cost reduction

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Very low voltage overshoot