PBSS4032NT

NXP  PBSS4032NT  单晶体管 双极, NPN, 30 V, 180 MHz, 390 mW, 2.6 A, 500 hFE

The is a 2.6A NPN breakthrough-in small signal BISS Transistor in a small surface-mount plastic package.

.

Low collector-emitter saturation voltage VCEsat

.

Optimized switching time

.

High collector current capability IC and ICM

.

High collector current gain hFE at high IC

.

High energy efficiency due to less heat generation

.

Smaller required printed-circuit board PCB area than for conventional transistors

.

AEC-Q101 qualified

.

PNP complement is PBSS4032PT

.

BM Marking code