PBSS2540F
PBSS2540F NPN三极管 40V 500mA/0.5A 450MHz 100 50mV~200mV SOT-523 marking/标记 2C
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 40V 集电极连续输出电流ICCollector CurrentIC| 500mA/0.5A 截止频率fTTranstion FrequencyfT| 450MHz 直流电流增益hFEDC Current GainhFE| 100 管压降VCE(sat)Collector-Emitter Saturation Voltage| 50mV~200mV 耗散功率PcPower Dissipation| 250mW/0.25W Description & Applications| 40 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors. APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • Audio frequency general purpose amplifier applications • Battery driven equipment mobile phones, video cameras, hand-held devices. DESCRIPTION NPN low VCEsat transistor in a SC-89 SOT490 plasticpackage. 描述与应用| 40 V低VCEsat NPN晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •改进的热行为由于平坦的线索, •增强的性能超过SOT23通用 晶体管。 应用 •通用开关和静音 •低频驱动电路 •音频通用放大器应用 •电池驱动设备(移动电话,视频 相机,手持设备)。 说明 NPN低VCEsat 在SC-89(SOT490)塑料晶体管包。