PBSS8110Z

NXP  PBSS8110Z  单晶体管 双极, NPN, 100 V, 650 mW, 1 A, 150 hFE

The is a 1A NPN breakthrough-in small signal BISS Transistor in a surface-mount plastic package with increased heat-sink.

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Low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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High efficiency due to less heat generation

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Smaller required printed-circuit board PCB area than for conventional transistors

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PNP complement is PBSS9110Z

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PB8110 Marking code