PMGD780SN,115

NXP  PMGD780SN,115  双路场效应管, MOSFET, 双N沟道, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V

The is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.

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Fast switching speed

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Low ON-state resistance