PMGD175XN

NXP  PMGD175XN  双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 0.17 ohm, 4.5 V, 1 V

The is a dual N-channel enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.

.

Very fast switching characteristics

e络盟:
NXP  PMGD175XN  双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 0.17 ohm, 4.5 V, 1 V