PMGD290UCEA

NXP  PMGD290UCEA  双路场效应管, MOSFET, N和P沟道, 725 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV

The is a complementary N/P-channel enhancement-mode FET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.

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Very fast switching characteristics

Newark:
# NXP  PMGD290UCEA  MOSFET Transistor, N and P Channel, 725 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV