IRFD110PBF

VISHAY  IRFD110PBF...  晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 10 V, 4 V

The is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Dynamic dv/dt rating

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Repetitive avalanche rated

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Automatic insertion

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End stackable

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175°C Operating temperature

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Fast switching and ease of paralleling