IRFD9020PBF

VISHAY  IRFD9020PBF  场效应管, MOSFET, P沟道, HEXDIP

DESCRIPTION

Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in  multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

FEATURES

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• P-Channel

• 175 °C Opertaing Temperature

• Fast Switching

• Lead Pb-free Available