IRFD110PBF
数据手册.pdfVISHAY IRFD110PBF... 晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 10 V, 4 V
The is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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- Dynamic dv/dt rating
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- Repetitive avalanche rated
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- Automatic insertion
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- End stackable
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- 175°C Operating temperature
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- Fast switching and ease of paralleling