PBSS4032PX

NXP  PBSS4032PX  单晶体管 双极, PNP, -30 V, 115 MHz, 600 mW, -4.2 A, 350 hFE

The is a 4.2A PNP breakthrough-in small signal BISS Transistor in a medium power and flat lead surface-mount plastic package.

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Very low collector-emitter saturation voltage VCEsat

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Optimized switching time

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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High energy efficiency due to less heat generation

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Smaller required printed-circuit board PCB area than for conventional transistors

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AEC-Q101 qualified

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NPN complement is PBSS4032NX

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6J Marking code