PBHV8540Z

NXP  PBHV8540Z  单晶体管 双极, NPN, 400 V, 30 MHz, 700 mW, 500 mA, 200 hFE

The is a 0.5A NPN breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package with increased heat-sink.

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High voltage

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Low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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AEC-Q101 qualified

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PNP complement is PBHV9040Z

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V8540Z Marking code