PBSS2515E,115

NXP  PBSS2515E,115  单晶体管 双极, NPN, 15 V, 420 MHz, 150 mW, 500 mA, 90 hFE

The is a 0.5A NPN breakthrough-in small signal BISS Transistor in an ultra-small surface-mount plastic package.

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Low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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High efficiency due to less heat generation

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Smaller required printed-circuit board PCB area than for conventional transistors

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PNP complement is PBSS3515E

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1Q Marking code