SIHP12N50E-GE3
VISHAY SIHP12N50E-GE3. 场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3
The is an E series N-channel enhancement-mode Power MOSFET suitable for computing, lighting, consumer electronics, switch mode power supplies and hard switched topology applications.
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- Low figure-of-merit FOM Ron x Qg
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- Low input capacitance CISS
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- Reduced switching
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- Reduced conduction losses
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- Low gate charge Qg
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- Avalanche energy rated UIS
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- Halogen-free