SIHP33N60EF-GE3

VISHAY  SIHP33N60EF-GE3  场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-3

The is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.

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Fast body diode

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Reduced trr, Qrr and IRRM

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Low figure-of-meritFOM RON x Qg

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Low input capacitance Ciss

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Reduced switching and conduction losses

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Ultra low gate charge

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Halogen-free