SIHP18N50C-E3

VISHAY  SIHP18N50C-E3.  晶体管, N沟道

The is a 500VDS N-channel enhancement-mode Power MOSFET with antiparallel diode.

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Low figure-of-merit FOM Ron x Qg

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100% Avalanche tested

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High peak current capability

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dV/dt Ruggedness

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Improved trr/Qrr

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Improved gate charge

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High power dissipations capability