SIR812DP-T1-GE3

VISHAY  SIR812DP-T1-GE3  晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for motor control, load switch and O-ring applications.

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range