FQP9N25C
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
250V N沟道MOSFET 250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features
• 8.8A, 250V, RDSon = 0.43Ω @VGS = 10 V
• Low gate charge typical 26.5 nC
• Low Crss typical 45.5 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability