VNB35N07TR-E
数据手册.pdfSTMICROELECTRONICS VNB35N07TR-E 晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
The is an OMNIFET fully auto-protected Power MOSFET made using VIPower® technology. It is intended for replacement of standard power MOSFETs in DC to 50kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
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- Diagnostic feedback through input pin
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- ESD protection
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- Direct access to the gate of the power MOSFET analogue driving
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- Compatible with standard power MOSFET