过滤结果:18
图片 | 品牌型号 | 描述 | 单价(含增值税) | 库存信息 | 系列 | 工作温度 | 安装类型 | 封装/外壳 | 供应商器件封装 |
---|---|---|---|---|---|---|---|---|---|
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 33A I4PAK5 数据手册 | 1+:
需询价
| - | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 50A I4PAK5 数据手册 | 1+:
需询价
| - | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1700V 18A I4PAK5 数据手册 | 1+:
需询价
| - | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-4, Isolated | ISOPLUS i4-PAC™ | |
![]() | 授权代理品牌 | IGBT H BRIDGE 2500V 23A 24SMPD 数据手册 | +1: ¥492.6636 +10: ¥462.8052 +25: ¥447.876 +100: ¥403.0884 | - | -55°C ~ 150°C (TJ) | Surface Mount | 24-SMD Module, 9 Leads | 24-SMPD | |
![]() | 授权代理品牌 | IGBT H BRIDGE 600V 30A I4PAK5 数据手册 | +25: ¥76.863072 | - | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 32A SMPD 数据手册 | +200: ¥98.01792 | - | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 43A SMPD 数据手册 | +200: ¥110.23584 | - | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 63A SMPD 数据手册 | +200: ¥112.43232 | ISOPLUS™ | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 32A SMPD 数据手册 | +20: ¥113.92953 | - | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 63A SMPD 数据手册 | +200: ¥124.78752 | - | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 43A SMPD 数据手册 | +20: ¥128.50266 | - | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 63A SMPD 数据手册 | +20: ¥130.65195 | ISOPLUS™ | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1200V 63A SMPD 数据手册 | +20: ¥145.89003 | - | -55°C ~ 150°C (TJ) | Surface Mount | 9-SMD Module | ISOPLUS-SMPD™.B | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1700V 18A I4PAK5 数据手册 | +25: ¥281.97312 | - | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | |
![]() | 授权代理品牌 | IGBT H BRIDGE 1700V 18A I4PAK5 | +25: ¥285.95424 | - | - | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | |
![]() | 授权代理品牌 | IGBT F BRIDGE 3000V 34A 24SMPD 数据手册 | +20: ¥587.78577 | BIMOSFET™ | -55°C ~ 150°C (TJ) | Surface Mount | 24-SMD Module, 9 Leads | 24-SMPD | |
![]() | 授权代理品牌 | IGBT TRANS 3000V 38A | +1: ¥695.5806 +10: ¥659.63898 +25: ¥641.691336 +100: ¥574.37952 +250: ¥565.40484 | * | - | - | - | - | |
![]() | 授权代理品牌 | IGBT H BRIDGE 600V 40A I4PAK5 数据手册 | +1: ¥121.0638 +10: ¥111.2826 +25: ¥106.66656 +100: ¥92.25216 +250: ¥89.36928 | - | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
什么是晶体管-IGBT阵列:
IGBT(Insulated Gate Bipolar Transistor),绝缘栅双极型晶体管,是由BJT(双极型三极管)和MOS(绝缘栅型场效应管)组成的复合全控型电压驱动式功率半导体器件, 兼有MOSFET的高输入阻抗和GTR的低导通压降两方面的优点。GTR饱和压降低,载流密度大,但驱动电流较大;MOSFET驱动功率很小,开关速度快,但导通压降大,载流密度小。IGBT综合了以上两种器件的优点,驱动功率小而饱和压降低。