JAN2N2218A

NPN开关晶体管硅 NPN SWITCHING SILICON TRANSISTOR

NPN SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/251

艾睿:
Implement this versatile NPN JAN2N2218A GP BJT from Microsemi into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

Verical:
Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag