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JAN2N2904A

PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR

This family of 2N2904A and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications.  These devices are also available in a TO-5 package.

also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.


艾睿:
The PNP JAN2N2904A general purpose bipolar junction transistor, developed by Microsemi, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.


Verical:
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag


JAN2N2904A PDF数据文档
图片 型号 厂商 下载
JAN2N2904A Microsemi 美高森美
JAN2N3019 Microsemi 美高森美
JAN2N2329 Microsemi 美高森美
JAN2N2222A ON Semiconductor 安森美
JAN2N2907A Microsemi 美高森美
JAN2N2219A Microsemi 美高森美
JAN2N3501 Microsemi 美高森美
JAN2N3700 Microsemi 美高森美
JAN2N2905A ON Semiconductor 安森美
JAN2N2906A Microsemi 美高森美
JAN2N6193 Microsemi 美高森美