HAT1043M02

HAT1043M02 P沟道MOS场效应管 -20V -4.4A 0.055ohm SOT-163 marking/标记 1043 低导通电阻 低驱动电流

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -4.4A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.055Ω @-3A,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.4--1.4V 耗散功率PdPower Dissipation| 2W Description & Applications| Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device can be driven from 3 V source 描述与应用| •低导通电阻 •低驱动电流 •高密度安装 •2.5 V门驱动装置可以驱动从3 V源