FQA17N40

400V N沟道MOSFET 400V N-CHANNEL MOSFET

These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.

Product Highlights

17.2A, 400V, R

DSon

= 0.27

W

@V

GS

= 10 V

Low gate charge typical 45 nC

Low Crss typical 30 pF

Fast switching

100% avalanche tested

Improved dv/dt capability