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FQA140N10

FAIRCHILD SEMICONDUCTOR  FQA140N10  晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

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220nC Typical low gate charge
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470pF Typical low Crss
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100% Avalanche tested

FQA140N10 PDF数据文档
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