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ULN2004ADRE4

TEXAS INSTRUMENTS  ULN2004ADRE4  双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC

- 双极 BJT - 阵列 7 NPN 达林顿 50V 500mA - - 表面贴装型 16-SOIC


得捷:
IC PWR RELAY 7NPN 1:1 16SOIC


立创商城:
ULN2004ADRE4


贸泽:
Darlington Transistors Hi-Vltg Hi-Crnt Darl Transistor Arrays


e络盟:
TEXAS INSTRUMENTS  ULN2004ADRE4  双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC


艾睿:
Higher current yields within your circuit is what you will get with Texas Instruments&s; NPN ULN2004ADRE4 Darlington transistor. This product&s;s maximum continuous DC collector current is 0.5 A. It has a maximum collector emitter saturation voltage of 1.1@100mA|1.3@200mA|1.6@350mA V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This Darlington transistor array has an operating temperature range of -20 °C to 70 °C. It has a maximum collector emitter voltage of 50 V.


Verical:
Trans Darlington NPN 50V 0.5A 16-Pin SOIC T/R


Newark:
# TEXAS INSTRUMENTS  ULN2004ADRE4  Bipolar BJT Array Transistor, Darlington, NPN, 50 V, 500 mA, 1000, SOIC


ULN2004ADRE4 PDF数据文档
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