锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

STGW30H60DF

Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin3+Tab TO-247 Tube

This powerful and secure IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.

STGW30H60DF PDF数据文档
图片 型号 厂商 下载
STGW30H60DF ST Microelectronics 意法半导体
STGW20H60DF ST Microelectronics 意法半导体
STGW35HF60W ST Microelectronics 意法半导体
STGWT30H65FB ST Microelectronics 意法半导体
STGWT30H60DFB ST Microelectronics 意法半导体
STGW19NC60W ST Microelectronics 意法半导体
STGWT40H60DLFB ST Microelectronics 意法半导体
STGWT40H65DFB ST Microelectronics 意法半导体
STGW30H60DFB ST Microelectronics 意法半导体
STGWT20H60DF ST Microelectronics 意法半导体
STGWT30V60F ST Microelectronics 意法半导体