STS8C5H30L

STMICROELECTRONICS  STS8C5H30L  双路场效应管, MOSFET, N和P沟道, 8 A, 30 V, 0.018 ohm, 10 V, 1.6 V

The is a N/P-channel Power MOSFET for switching applications. This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II P-channel and STripFET™ V N-channel technologies. The resulting transistors show extremely high packing density for low ON-resistance and rugged avalanche characteristics.

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Conduction losses reduced

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Switching losses reduced

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Low threshold drive

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Standard outline for easy automated surface-mount assembly