PXAC210552FCV1R0XTMA1

High Power RF LDMOS FET, 55W, 28V, 1805 – 2170MHz

Summary of Features:

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Broadband internal matching

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Asymmetric Doherty design

\- Main : P 1dB = 20 W Typ

- Peak : P 1dB = 35 W Typ

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CW performance, 2170 MHz, 26 V,

\- Output power at P 1dB = 27 W

\- Gain = 17 dB

\- Efficiency = 59%

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Integrated ESD protection

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ESD Rating: Human Body Model, Class 1B per ANSI/ESDA/JEDEC JS-001

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Capable of handling 10:1 VSWR @28 V, 55 W CW output power

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Low thermal resistance

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Pb-free and RoHS compliant

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Package: H-37248-4, earless