PXAC241702FCV1XWSA1

射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LD10M

Summary of Features:

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Asymmetrical Doherty design

\- Main: P1dB = 60 W Typ

\- Peak: P1dB = 90 W Typ

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Broadband internal input and output matching

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Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration

\- Output power at P1dB = 100 W

\- Efficiency = 49%

\- Gain = 17.5 dB

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Integrated ESD protection: Human Body Model, Class 1C per JESD22-A114

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Capable of handling 10:1 VSWR @28 V, 120 W CW output power

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Low thermal resistance

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Pb-free and RoHS compliant