PXAC261002FCV1XWSA1
Trans RF MOSFET N-CH 65V 5Pin Case H-37248 Tray
Summary of Features:
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- Broadband internal input and output matching
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- Asymmetric Doherty design
\- Main: P1dB = 40 W Typ
\- Peak: P1dB = 70 W Typ
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- Typical Pulsed CW performance, 2590 MHz, 26 V, 160 μs, 10% duty cycle, Doherty Configuration
\- Output power at P3dB = 85 W
\- Efficiency = 56%
\- Gain = 14.7 dB
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- Capable of handling 10:1 VSWR @28 V, 100 W CW output power
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- Integrated ESD protection : Human Body Model, Class 1C per JESD22-A114
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- Low thermal resistance
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- Pb-free and RoHS compliant