SI7386DP-T1-E3

VISHAY  SI7386DP-T1-E3.  晶体管, N沟道

The is a TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.

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Reduced total dynamic gate charge Qg

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Fast switching

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PWM optimized for high efficiency

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New low thermal resistance PowerPAK® package with small size and low 1.07mm profile

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100% Rg tested

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-55 to 150°C Operating temperature range