SI7370DP-T1-E3
VISHAY SI7370DP-T1-E3 晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
The is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch and secondary synchronous rectifier applications.
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- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
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- PWM optimized
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- Fast switching
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- 100% Rg tested
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- -55 to 150°C Operating temperature range