IRLR3303PBF

Trans MOSFET N-CH 30V 35A 3Pin2+Tab DPAK

Description 

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Logic-Level Gate Drive

Ultra Low On-Resistance

Surface Mount IRLR3303

Straight Lead IRLU3303

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

Lead-Free