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STGW80V60F

Trans IGBT Chip N-CH 600V 120A 469000mW 3Pin3+Tab TO-247 Tube

Use the IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 469000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration. This device utilizes field stop|trench technology.

STGW80V60F PDF数据文档
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