FQU13N06LTU
FAIRCHILD SEMICONDUCTOR FQU13N06LTU 晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
The is a QFET® enhancement-mode N-channel Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- .
- Low level gate drive requirements allowing direct operation form logic drivers
- .
- 100% Avalanche tested
- .
- 4.8nC Typical low gate charge
- .
- 17pF Typical low Crss