FQU13N06LTU
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FQU13N06LTU 晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
The is a QFET® enhancement-mode N-channel Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- Low level gate drive requirements allowing direct operation form logic drivers
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- 100% Avalanche tested
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- 4.8nC Typical low gate charge
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- 17pF Typical low Crss