FQU10N20CTU
Trans MOSFET N-CH 200V 7.8A 3Pin3+Tab IPAK Rail
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary,
planar stripe, DMOS technology.
Features
• 7.8 A,200 V, RDSon = 360 mΩ Max.@ VGS = 10 V, ID= 3.9 A
• Low Gate Charge Typ. 20 nC
• Low Crss Typ. 40.5pF
• 100% Avalanche Tested
贸泽:
MOSFET N-CH/200V/10A/QFET
艾睿:
Trans MOSFET N-CH 200V 7.8A 3-Pin3+Tab IPAK Rail
安富利:
Trans MOSFET N-CH 200V 7.8A 3-Pin3+Tab IPAK Rail
Verical:
Trans MOSFET N-CH 200V 7.8A 3-Pin3+Tab IPAK Rail
Win Source:
MOSFET N-CH 200V 7.8A IPAK