IPP50R280CEXKSA1

Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPP50R280CEXKSA1, 13 A, Vds=550 V, 3引脚 TO-220封装

CoolMOS™ CE 功率 MOSFET

立创商城:
N沟道 500V 13A

得捷:
MOSFET N-CH 500V 13A TO220-3

欧时:
Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPP50R280CEXKSA1, 13 A, Vds=550 V, 3引脚 TO-220封装

e络盟:
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V

艾睿:
Make an effective common gate amplifier using this IPP50R280CEXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 92000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.

TME:
Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO220-3

Verical:
Trans MOSFET N-CH 550V 13A 3-Pin3+Tab TO-220 Tube