IPP50R299CP
INFINEON IPP50R299CP 晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
The is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
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- Extreme dV/dt rate
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- Ultra low RDS ON, very fast switching
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- Very low internal Rg
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- High peak current capability
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- Significant reduction of conduction and switching losses
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- High power density and efficiency for superior power conversion systems
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- Best-in-class performance ratio
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- Qualified according to JEDEC for target applications
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- Green device