IXFR44N50P

N沟道 500V 24A

VDSS = 500 V

ID25 =24 A

RDSon ≤ 150 mΩ

trr ≤ 200 ns

N-Channel Enhancement

Avalanche Rated

Fast Intrinsic Diode

Features

International standard isolated package

UL recognized package

Silicon chip on Direct-Copper-Bond substrate

\- High power dissipation

\- Isolated mounting surface

\- 2500V electrical isolation

Unclamped Inductive Switching UIS rated

Low package inductance

\- easy to drive and to protect

Fast intrinsic diode